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Main Business

AlN Heater

Based on 20 years of accumulated ceramic material design, sintering technology,
precision processing and bonding technology, we have mass-produced and supplied
CVD, PE-CVD, ALD, and AlN Heater used in high-temperature UV Curing or Asher process
equipment. We have responded to the increasing demand for AIN heaters by securing
the largest mass production facilityes in Korea in Anseong and Gangneung city.

* Functional parts attached to the chamber in the CVD ALD equipment
used in the Deposition process during the semiconductor process.
AIN Heater makes it possible to apply heat evenly to the Wafer.

Ceramic Heater
High Performance AlN Heater

Inserting RF layer & Heating element ≤450℃ E chuck (Monopolar, Bipolar) Inner & Outer zone Control

Inserting RF layer & Heating element ≥550℃ E chuck (Monopolar, Bipolar) Inner & Outer zone control Low leakage current between RF-Heater High temperature uniformity High upper dielectric thickness uniformity

Features of AlN 300mm Heater (One Zone)

  • AlN Heater for 300mm Wafer Process

  • Good Wafer Temperature at Various CVD Process

  • High Durability

  • Good Thermal Conductivity (180W/m-K)

  • Excellent Corrosion Resistance

  • Maximum plate size Φ400

Features of AlN 300mm Heater (Two Zones)

  • Temperature Uniformity is better than One Zone AlN 300mm Heater

  • Control each Heating Zone for Optimized Temp. Uniformity at 300mm Wafer Process

Features of AlN 300mm E-chuck Heater

  • E-chuck heater can grip a wafer during the process to prevent wafer warpage

  • RF or DC power would be applied for chucking and de-chucking the wafer

  • E-chuck heater allows to manufacture complex patterning applications for CVD and ALD processes

AlN Heater Line-Up
Process Temperature Zone Type (Optional Function)

PE-ALD

450℃ / 550℃ / 650℃

1-Zone / 2-Zone (Electrostatic Chuck / Purge Hole)

Thermal ALD

680℃

2-Zone (Vacuum Chuck / Purge Hole)

PE-CVD

50℃ / 350℃ / 400℃ / 450℃ / 550℃ / 650℃

1-Zone / 2-Zone (Electrostatic Chuck / Purge Hole)

Try drag from side to side

Change of Packaging Technology
Wire Bonding

Limitations of fine pitch implementation
Limitations of reducing process time
Disadvantages of RC delay caused by wire span

TSV

Compactness, reduction of interconnection
Length between chips fast signaling
High Capacity, Low Power

Characteristics of Ceramic TCB Heater
(TCB: Thermal Compression Bonding)

  • Good thermal conductivity (180W/m·K)

  • Maximum operating temperature : 500℃

  • Excellent corrosion resistance

  • Thermal stability

TCB Heater Image

Key parts used in TSV technology Ceramic Heater

Series (Upper Heater)
Model Working Max. Area Total Size (V/W/H) Max. Temp.

MPH012

12x12mn

41x41x30

450℃

MPH018

18x18mn

41x41x33

450℃

MPH022

22x22mn

46x36x41

450℃

MPH035

35x35mn

60x50x44

450℃

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Size can be changed to fit the equipment

Actual Photos of Product
Actual Photos of Product Images
Spec. Without attachment
Model Flatness Parallelism Heating Time Cooling Time

MPH012

≤ 0.01

≤ 0.02

≤ 2.0sec

≤ 4.0sec

MPH018

≤ 0.01

≤ 0.02

≤ 2.0sec

≤ 5.5sec

MPH022

≤ 0.01

≤ 0.02

≤ 3.0sec

≤ 6.0sec

MPH035

≤ 0.01

≤ 0.02

≤ 3.0sec

≤ 10.0sec

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Heating / Cooling Cycle : 400℃ ⇔ 150℃

Temperature Uniformity (@400℃)
Working Area : 17×17
Temperature Uniformity Images
Bottom Heater Without attachment
Process Product Name Wokring Max. Area Heating Time Cooling Time

MPH054

Bottom Heater

54x54 mn

≤ 35 Sec

≤ 30 Sec
Process Product Name Size Temp. Temp. Uniformity

MPH302

Vacuum Chuck Plater + Heater

330 x 20 mn

≤ 150℃

≤ 2%

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Bottom Heater Images
Typical Application

  • Solder Ball Bonding

  • 3D Printer Nozzle Heater

  • Wire and Die Bonding

  • PoP(Package on Package) Process

  • Dispenser Bonding

  • ACF Process