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사업분야

Business Field

AIN Heater (Pedestal)

20여년간의 축적된 세라믹 소재 조성 및 소결 기술, 정밀 가공 및 접합 기술을 바탕으로 반도체 제조 공정 내 증착 장비인
CVD, PE-CVD, ALD 및 고온의 UV Curing이나 Asher 공정 장비에 사용되는 양산용 AlN Heater를 제조, 공급하고 있습니다.
경기도 안성과 강원도 강릉에 국내 최대 규모의 양산 시설을 확보하여 증가하는 AlN Heater 수요에 대응하고 있습니다.

* 반도체 공정 중 증착(Deposition) 공정에서 사용되는 CVD(Chemical Vapor Deposition) 장비 내
Chamber에 부착되어 Wafer에 열을 균일하게 가해주는 소모성 부품

High Performance AlN Heater

Inserting RF layer & Heating element ≤450℃ E chuck (Monopolar, Bipolar) Inner & Outer zone Control

Inserting RF layer & Heating element ≥550℃ E chuck (Monopolar, Bipolar) Inner & Outer zone control Low leakage current between RF-Heater High temperature uniformity High upper dielectric thickness uniformity

Features of AlN 300mm Heater (One Zone)
  • AlN Heater for 300mm Wafer Process

  • Good Wafer Temperature at Various CVD Process

  • High Durability

  • Good Thermal Conductivity (180W/m-K)

  • Excellent Corrosion Resistance

  • Maximum plate size Φ400

Features of AlN 300mm Heater (Two Zones)
  • Temperature Uniformity is better than One Zone AlN 300mm Heater

  • Control each Heating Zone for Optimized Temp. Uniformity at 300mm Wafer Process

Features of AlN 300mm E-chuck Heater
  • E-chuck heater can grip a wafer during the process to prevent wafer warpage

  • RF or DC power would be applied for chucking and de-chucking the wafer

  • E-chuck heater allows to manufacture complex patterning applications for CVD and ALD processes

AlN Heater Line-Up
Process Temperature Zone Type (Optional Function)

PE-ALD

450℃ / 550℃ / 650℃

1-Zone / 2-Zone (Electrostatic Chuck / Purge Hole)

Thermal ALD

680℃

2-Zone (Vacuum Chuck / Purge Hole)

PE-CVD

50℃ / 350℃ / 400℃ / 450℃ / 550℃ / 650℃

1-Zone / 2-Zone (Electrostatic Chuck / Purge Hole)

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Change of Packaging Technology
Wire Bonding

Limitations of fine pitch implementation
Limitations of reducing process time
Disadvantages of RC delay caused by wire span

TSV

Compactness, reduction of interconnection
Length between chips fast signaling
High Capacity, Low Power

Characteristics of Ceramic TCB Heater
(TCB: Thermal Compression Bonding)
  • Good thermal conductivity (180W/m·K)

  • Maximum operating temperature : 500℃

  • Excellent corrosion resistance

  • Thermal stability

TCB Heater Image

Key parts used in TSV technology Ceramic Heater

Series (Upper Heater)
Model Working Max. Area Total Size (V/W/H) Max. Temp.

MPH012

12x12mn

41x41x30

450℃

MPH018

18x18mn

41x41x33

450℃

MPH022

22x22mn

46x36x41

450℃

MPH035

35x35mn

60x50x44

450℃

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Size can be changed to fit the equipment

Actual Photos of Product
Actual Photos of Product Images
Spec. Without attachment
Model Flatness Parallelism Heating Time Cooling Time

MPH012

≤ 0.01

≤ 0.02

≤ 2.0sec

≤ 4.0sec

MPH018

≤ 0.01

≤ 0.02

≤ 2.0sec

≤ 5.5sec

MPH022

≤ 0.01

≤ 0.02

≤ 3.0sec

≤ 6.0sec

MPH035

≤ 0.01

≤ 0.02

≤ 3.0sec

≤ 10.0sec

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Heating / Cooling Cycle : 400℃ ⇔ 150℃

Temperature Uniformity (@400℃)
Working Area : 17×17
Temperature Uniformity Images
Bottom Heater Without attachment
Process Product Name Wokring Max. Area Heating Time Cooling Time

MPH054

Bottom Heater

54x54 mn

≤ 35 Sec

≤ 30 Sec

Process Product Name Size Temp. Temp. Uniformity

MPH302

Vacuum Chuck Plater + Heater

330 x 20 mn

≤ 150℃

≤ 2%

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Bottom Heater Images
Typical Application
  • Solder Ball Bonding

  • 3D Printer Nozzle Heater

  • Wire and Die Bonding

  • PoP(Package on Package) Process

  • Dispenser Bonding

  • ACF Process